Using Modeling to Resolve Design and Reliability Issues

Synopsis: A video recording of a short course held by the Electron Devices Meeting in 2000. This course provides an overview of MOS and bipolar devices, circuit models and reliability physics. The course describes the operation and design issues of Si integrated circuits, points out applications and discusses the process integration, reliability and testing issues.

Contents :
TOPICS: Semiconductor physics and p-n junction models; MOS capacitance-voltage modeling; MOSFET current-voltage behavior: SPICE type circuit models; MOSFET short channel effects: DIBL, GIDL, charge sharing, velocity overshoot, quantum-mechanical models; Bipolar junction transistor models: Hybrid-pi, Ebers-Moll and Gummel-Poon; BJT second order effects: Early, Kirk, Webster, breakdown, HBTs; Reliability Issues in Si ICs: Hot carriers, latchup, gate oxide integrity, electromigration, electrostatic discharge
Series: Vanguard, Series
Language: English
Country: United States
Year of release: 2001
Year of production: 2000
Subjects: Information technology
Keywords: circuit design; electronic engineering; microelectronic devices; modelling - engineering; reliability; semiconductors

Name: Institute of Electrical and Electronic Engineers Inc
Email: customer-service@ieee.org
Web: http://www.ieee.org/organizations/eab/ceus/ssvideo.htm External site opens in new window
Phone: +1 908 562 5493
Address: 445 Hoes Lane
PO Box 1331
Piscataway
NJ 08855-1331
USA

This record has been viewed 441 times.